N08 Lab@IOP Publications

Publications since 2010

2020年：

[52] Shuanglong Liu, Yang Xu, Yun-Peng Wang, Yong P Chen, James N Fry, Hai- Ping Cheng, Gate field effects on the topological insulator BiSbTeSe2 interface. Applied Physics Letters 116, 031601 (2020).

[51] G. Shi, M. J. Zhang, D. Y. Yan, H. L. Feng, M. Yang, Y. G. Shi, and Y. Q. Li, Anomalous Hall effect in layered ferrimagnet MnSb2Te4. Chin. Phys. Lett. 37, 047301 (2020).

[50] D. Culcer , A. C. Keser , Y. Q. Li, and G. Tkachov, Transport in two-dimensional topological materials: recent developments in experiment and theory. 2D Mater. 7, 022007 (2020).

[49] L. Q. Yu, L. Q. Hu, J. L. Barreda, T. Guan, X. Y. He, K. H. Wu, Y. Q. Li, and P. Xiong, Robust gapless surface state against surface magnetic impurities on (Bi0.5Sb0.5)2Te3 evidenced by in situ magnetotransport measurements. Phys. Rev. Lett. 124, 126601 (2020).

[48] S. H. Li^#, G. X. Gu^#, E. K. Liu, P. Cheng, B. J. Feng, Y. Q. Li, L. Chen, and K. H. Wu, Epitaxial Growth and Transport Properties of Magnetic Weyl Semimetal Co3Sn2S2 Thin Films. ACS Appl. Elec. Mater. 2 (1), 126-133 (2020).

2019年：

[47] Hyoungdo Nam, Yang Xu, Ireneusz Miotkowski, Jifa Tian, Yong P. Chen, Chang Liu, M. Zahid Hasan, Wenguang Zhu, Gregory A. Fiete, and Chih-Kang Shih, Microscopic investigation of Bi2−xSbxTe3−ySey systems: on the origin of a robust intrinsic topological insulator. Journal of Physics and Chemistry of Solids 128, 251 (2019).

[46] S. Yang, Z. L. Li, C. J. Lin, C. J. Yi, Y. G. Shi, D. Culcer, and Y. Q. Li, Unconventional Temperature dependence of the anomalous Hall effect in HgCr2Se4. Phys. Rev. Lett. 123, 096601 (2019).

[45] J. P. Sun, Y. Y. Jiao, C. J. Yi, S. E. Dissanayake, M. Matsuda, Y. Uwatoko, Y. G. Shi, Y. Q. Li, Z. Fang, and J.-G. Cheng, Magnetic-competition-induced colossal magnetoresistance in n-type HgCr2Se4 under high pressure. Phys. Rev. Lett. 123, 047201 (2019)

[44] P. Seifert, M. Kundinger, G. Shi, X. Y. He, K. H. Wu, Y. Q. Li, A. Holleitner, and C. Kastl, Quantized Conductance in Topological Insulators Revealed by the Shockley-Ramo Theorem. Phys. Rev. Lett. 122, 146804 (2019).

[43] J. Teng, N. Liu, and Y. Q Li, Mn-doped topological insulators: a review. J. Semicond. 40, 081507 (2019).

[42] M. Yang, G. X. Gu, C. J. Yi, D Yan, Y. Q. Li, and Y. G. Shi, Magnetic and transport properties of Zr1-xNbxCo2Sn. J. Phys. Cond. Matt. 31, 275702 (2019).

[41] X. Y. Yu, H. L. Feng, G. X. Gu, Y. H. Liu, Z. L. Li, T. S. Xu, and Y. Q. Li, Andreev reflection spectroscopy of ferromagnetic Fe0.26TaS2 with layered structure. Act. Phys. Sin. 68，247201 (2019).

2018年：

[40] Long Yuan, Ting-Fung Chung, Agnieszka Kuc, Yan Wan, Yang Xu, Yong P. Chen, Thomas Heine, and Libai Huang, Photocarrier Generation from Interlayer Charge-Transfer Transitions in WS2-Graphene Heterostructures. Science Advances 4, e1700324 (2018).

[39] N. Liu, J. Teng, Y. Q. Li, Two-component Anomalous Hall effect in a magnetically doped topological insulator. Nat. Commun. 9, 1282 (2018).

[38] G. X. Gu, G. Q. Zhao, C. J. Lin, Y. Q. Li*, C. Q. Jin*, and G. Xiang*, Asperomagnetic order in diluted magnetic semiconductor (Ba,Na)(Zn,Mn)2As2. Appl. Phys. Lett. 112, 032402 (2018).

[37] C.‐S. Yang, D.‐S. Shang, N. Liu, E. J. Fuller, S. Agrawal, A. A. Talin, Y. Q. Li, B.‐G. Shen, and Y. Sun, All-Solid-State Synaptic Transistor with Ultralow Conductance for Neuromorphic Computing. Adv. Func. Mater. 28 (42), 1804170 (2018).

[36] S. N. Zhu, D. C. Meng, G. H. Liang, G. Shi, P. Zhao, P. Cheng, Y. Q. Li, X. F. Zhai, Y. L. Lu, L. Chen, and K. H. Wu, Proximity-induced magnetism and an anomalous Hall effect in Bi2Se3/LaCoO3: a topological insulator/ferromagnetic insulator thin film heterostructure. Nanoscale 10 (21) 10041 (2018).

[35] S. N. Zhu, G. Shi, P. Zhao, D. C. Meng, G. H. Liang, X. F. Zhai, Y. L. Lu, Y. Q. Li, L. Chen, and K. H. Wu, Growth and transport properties of topological insulator Bi2Se3 thin film on a ferromagnetic insulating substrate. Chin. Phys. B 27, 076801 (2018).

2017年：

[34] J. Liao, Y. B. Ou, H. W. Liu, K. He, X. C. Ma, Q.-K. Xue, and Y. Q. Li, Enhanced electron dephasing in three-dimensional topological insulators. Nat. Commun. 8, 16071 (2017).

[33] C. J. Yi, S. Yang, M. Yang, L. Wang, Y. Matsushita, S. S. Miao, Y.Y. Jiao, J. G. Cheng, Y.Q. Li, K. Yamaura, Y. Shi, and J. L. Luo, Large negative magnetoresistance of a nearly Dirac material: Layered antimonide EuMnSb2. Phys. Rev. B 96, 205103 (2017).

[32] C. S. Yang, D. S. Shang, N. Liu, G. Shi, X. Shen, R. C. Yu, Y. Q. Li, and Y. Sun, A Synaptic Transistor based on Quasi-2D Molybdenum Oxide. Adv. Mater. 29 (27), 1700906 (2017)

[31] G. Q. Zhao, C. J. Lin, Z. Deng, G. X. Gu, S. Yu, X. C. Wang, Z. Z. Gong, Yasutomo J. Uemera, Y. Q. Li & C. Q. Jin, Single Crystal Growth and Spin Polarization Measurements of Diluted Magnetic Semiconductor (BaK)(ZnMn)2As2. Sci. Rep. 7, 14473 (2017).

[30] S. Zhang, L. Pi, R. Wang, G. L. Yu, X.-C. Pan, Z. X. Wei, J. L. Zhang, C. Y. Xi, Z. B. Bai, F. C. Fei, M. Y. Wang, J. Liao, Y. Q. Li, X. F. Wang, F. Q. Song, Y. H. Zhang, B. G. Wang, D. Y. Xing, and G. H. Wang, Anomalous quantization trajectory and parity anomaly in Co cluster decorated BiSbTeSe2 nanodevices. Nat. Commun. 8, 77 (2017).

2016年：

[29] Corentin Durand, Xiao-Guang Zhang, Saban Hua, Chuanxu Ma, Michael McGuire, Yang Xu, Helin Cao, Ireneusz Miotkowski, Yong P. Chen, and An-Ping Li, Differentiation of surface and bulk conductivities in topological insulator via four-probe spectroscopy. Nano Letters 16, 2213 (2016).

[28] C. J. Lin, Y. G. Shi, L. Zhang, G. M. Zhang, J. Müller, and Y. Q. Li, Spin correlations and colossal magnetoresistance in HgCr2Se4. Phys. Rev. B 94, 224404 (2016).

[27] D. S. Wu, J. Liao, W. Yi, X. Wang, P. G. Li, H. M. Weng, Y. G. Shi, Y. Q. Li, J. L. Luo, X. Dai, and Z. Fang, Giant semiclassical magnetoresistance in high mobility TaAs2 semimetal. Appl. Phys. Lett. 108, 042105 (2016).

[26] C. J. Lin, Y. G.Shi and Y. Q. Li, Analytical Descriptions of Magnetic Properties and Magnetoresistance in n-Type HgCr2Se4. Chin. Phys. Lett. 33, 077501 (2016).

[25] J. Liao, G. Shi, N. Liu, and Y. Q. Li, Electron localization in ultrathin films of three-dimensional topological insulators. Chin. Phys. B 25, 117201 (2016).

[24] Feng, X., Y. Feng, J. Wang, Y. Ou, Z. Hao, C. Liu, Z. Zhang, L. Zhang, C. Lin, J. Liao, Y. Li, L. L. Wang, S. H. Ji, X. Chen, X. Ma, S. C. Zhang, Y. Wang, K. He, and Q. K. Xue. Thickness Dependence of the Quantum Anomalous Hall Effect in Magnetic Topological Insulator Films. Adv Mater 28, no. 30 (Aug 2016): 6386-90.

[23] Y. Q. Cai, Q. Cui, X. Li, Z. L. Dun, J. Ma, C. dela Cruz, Y. Y. Jiao, J. Liao, P. J. Sun, Y. Q. Li, J. S. Zhou, J. B. Goodenough, H. D. Zhou, and J.-G. Cheng, High-pressure synthesis and characterization of the effective pseudospin S=1/2 XY pyrochlores R2Pt2O7 (R=Er,Yb). Phys. Rev. B 93, 014443 (2016).

2015年：

[22] Qiong Nian, Mojib Saei, Yang Xu, Ganguli Sabyasachi, Biwei Deng, Yong P Chen, and Gary J Cheng, Crystalline Nanojoining Silver Nanowire Percolated Networks on Flexible Substrate. ACS Nano 9 (10), 10018 (2015).

[21] J. Liao, Y. B. Ou, X. Feng, S. Yang, C. J. Lin, W. M. Yang, K. H. Wu, K. He, X. C. Ma, Q.-K. Xue, and Y. Q. Li, Observation of Anderson localization in ultrathin films of three-dimensional topological insulators. PHYS. REV. LETT 114, 216601 (2015).

[20] T. Guan, C. J. Lin, C. L. Yang, Y. G. Shi, C. Ren, Y. Q. Li, H. M. Weng, X. Dai, Z. Fang, S. S. Yan, and P. Xiong, Evidence for half-metallicity in n-type HgCr2Se4. PHYS. REV. LETT (2015).

[19] T. Guan, B. Friess, Y. Q. Li, S. S. Yan, V. Umansky, K. von Klitzing, and J. H. Smet, Disorder enhanced nuclear spin relaxation at Landau level filling factor one. CHIN. PHYS. B 24, 067302 (2015).

[18] T. Guan, J. Teng, K. H. Wu, and Y. Q. Li, Linear magnetoresistance in topological insulator (Bi0.5Sb0.5)2Te3 thin films. ACTA PHYS. SINICA 64, 077201 (2015).

[17] C. Kastl, P. Seifert, X. Y. He, K. H. Wu, Y. Q. Li, and A. W. Holleitner, Chemical potential fluctuations in topological insulator (Bi0.5Sb0.5)2Te3 films visualized by photocurrent spectroscopy. 2D MATER. 2, 024012 (2015).

[16] Y. Liang, W. T. Li, S. Y. Zhang, C. J. Lin, C. Li, Y. Yao, Y. Q. Li, H. Yang, and J. D. Guo, Homoepitaxial SrTiO3(111) film with high dielectric performance and atomically well-defined surface. SCI. REP. 5, 10634 (2015).

[15] J. Zhu, Z.-X. Yang, X.-Y. Hou, T. Guan, Q.-T. Zhang, Y. Q. Li, X.-F. Han, J. Zhang, C.-H. Li, L. Shan, G.-F. Chen, and C. Ren, Tunneling spectroscopy of Al/AlOx/Pb subjected to hydrostatic pressure. APPL. PHYS. LETT. 106, 202601 (2015).

2014年：

[14] M. Hajlaoui, E. Papalazarou, J. Mauchain, L. Perfetti, A. Taleb-Ibrahimi, F. Navarin, M. Monteverde, P. Auban-Senzier, C. R. Pasquier, N. Moisan, D. Boschetto, M. Neupane, M. Z. Hasan, T. Durakiewicz, Z. Jiang, Y. Xu, I. Miotkowski, Y. P. Chen, S. Jia, H. W. Ji, R. J. Cava, and M. Marsi, Tuning a Schottky barrier in a photoexcited topological insulator with transient Dirac cone electron-hole asymmetry. Nature Communications 5, 3003 (2014).

[13] W. M. Yang, S. Yang, Q. H. Zhang, Y. Xu, S. P. Shen, J. Liao, J. Teng, C. W. Nan, L. Gu, Y. Sun, K. H. Wu, and Y. Q. Li, Proximity effect between a topological insulator and a magnetic insulator with large perpendicular anisotropy. APPL. PHYS. LETT. 105, 092411 (2014).

2013年：

[12] C. J. Lin, X. Y. He, J. Liao, X. X. Wang, V. Sacksteder IV, W. M. Yang, T. Guan, Q. M. Zhang, L. Gu, G. Y. Zhang, C. G. Zeng, X. Dai, K. H. Wu, and Y. Q. Li, Parallel field magnetoresistance of three-dimensional topological insulator thin films. PHYS. REV. B 88, 041307 (R) (2013).

[11] W. M. Yang, C. J. Lin, J. Liao, and Y. Q. Li, Electrostatic field effects on three-dimensional topological insulators (invited review article). CHIN. PHYS. B 22, 097202 (2013).

2012年：

[10] Y. Q. Li, V. Umansky, K. von Klitzing, and J. H. Smet, Current induced nuclear spin depolarization at Landau level filling factor nu=1/2. Phys. Rev. B 86, 115421 (2012) [Editors’ Suggestion].

[9] X. Y. He, T. Guan, X. X. Wang, B.J. Feng, P. Cheng, L. Chen, Y. Q. Li and K. H. Wu, Highly tunable electron transport in epitaxial topological insulator (Bi1-xSbx)2Te3 thin films. Appl. Phys. Lett. 101, 123111 (2012).

[8] C. Kastl, T. Guan, X. Y. He, K. H. Wu, Y. Q. Li, and A. W. Holleitner, Local photocurrent generation in thin films of the topological insulator Bi2Se3. APPL. PHYS. LETT. 101, 251110 (2012).

[7] X. X. Wang, X. Y. He, T. Guan, J. Liao, C. J. Lin, K. H. Wu, Y. Q. Li and C. G. Zeng, Transport properties of topological insulator Bi2Se3 thin films in tilted magnetic fields. PHYSICA E 46, 236-240 (2012).

[6] Y. Q. Li, K. H. Wu, J. R. Shi, and X. C. Xie, Electron transport properties of three-dimensional topological insulators (invited review article). FRONT. PHYS. 7, 165 (2012).

2011年：

[5] J. Chen, X. Y. He, K. H. Wu, Z. Q. Ji, L. Lu, J. R. Shi, J. H. Smet, and Y. Q. Li, Tunable surface conductivity in Bi2Se3 revealed with diffusive electron transport. PHYS. REV. B 83, 241304 (R) (2011) [Editors’ suggestion], also at arXiv:1104:0986. See also: Commentary article“Whispers in bedlam: detecting the Dirac metal at a surface of a topological insulator by means of weak localization”by Leonid Glazman on Journal Club for Condensed Matter Physics.

[4] G. H. Zhang, H. J. Qin, J. Chen, X. Y. He, Y. Q. Li, and K. H. Wu, Growth of topological insulator Bi2Se3 thin films on SrTiO3 with large gate-voltage-tunable chemical potential. ADV. FUNC. MATER. 21，2351 (2011).

[3] K. H. Wu and Y. Q. Li, Growth and gate-controlled electron transport properties of topological insulator thin films (invited review article). PHYSICS (China) 40, 440 (2011).

[2] F. M. Qu, F. Yang, J. Chen, J. Shen, Y. Ding, J. B. Lu, Y. J. Song, H. X. Yang, G. T. Liu, J. Fan, Y. Q. Li, Z. Q. Ji, C. L. Yang, and L. Lu, Aharonov-Casher effect in Bi2Se3 square-ring interferometers. PHYS. REV. LETT. 107, 016802 (2011).

2010年：

[1] J. Chen, H. J. Qin, F. Yang, J. Liu, T. Guan, F. M. Qu, G. H. Zhang, J. R. Shi, X. C. Xie, C. L. Yang, K. H. Wu*, Y. Q. Li*, and L. Lu, Gate voltage control of chemical potential and weak antilocalization in Bi2Se3.PHYS. REV. LETT. 105, 176602 (2010).